AWARDS

October 2013
Fairfield Crystal is awarded $1,425,000 to for ‘High Quality, Low-Cost GaN Single Crystal Substrates for High Power Devices

September 2010
Fairfield Crystal wins another Phase II SBIR Award - SBIR Phase II: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

July 2009
The latest NSF grant awarded to Fairfield Crystal Technology is the SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

January 2009
Fairfield Crystal Technology is awarded a National Science Foundation Phase I SBIR grant

September 2008
Fairfield Crystal is selected as the Shipman & Goodwin Most Promising Emerging Technology Company of the Year at the second annual Innovation Pipeline Awards and Technology Showcase.

April 2008
Fairfield Crystal Technology is awarded a grant from CCAT SBIR Office.

October 2007
Fairfield Crystal Technology is awarded a National Science Foundation Phase I SBIR grant

April 2006
Fairfield Crystal Technology is awarded a Department of Energy Phase II SBIR grant

April 2006
Fairfield Crystal Technology is awarded a Department of Energy Phase I SBIR grant

April 2005
Fairfield Crystal Technology is awarded a Department of Energy Phase I SBIR grant