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July 2009

The latest NSF grant awarded to Fairfield Crystal Technology is the SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

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February 2016

February 16, 2016

Fairfield Crystal will be exhibiting at Photonics West February 16 – 18. Come by our booth 5651 and see our new ZnSe and ZnS product

October 2013

October 14, 2013

Fairfield Crystal is awarded $1,425,000 to for ‘High Quality, Low-Cost GaN Single Crystal Substrates for High Power Devices – Read Article >

September 2010

September 16, 2010

Fairfield Crystal wins another Phase II SBIR Award – SBIR Phase II: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters

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Fairfield Crystal provides high-quality optical materials and crystal growth technology for various industries.

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