October 2013
Fairfield Crystal is awarded $1,425,000 to for ‘High Quality, Low-Cost GaN Single Crystal Substrates for High Power Devices – Read Article >
October 14, 2013
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Fairfield Crystal is awarded $1,425,000 to for ‘High Quality, Low-Cost GaN Single Crystal Substrates for High Power Devices – Read Article >
Fairfield Crystal wins another Phase II SBIR Award – SBIR Phase II: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters
The latest NSF grant awarded to Fairfield Crystal Technology is the SBIR Phase I: A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride
Fairfield Crystal Technology is awarded a National Science Foundation Phase I SBIR grant
Fairfield Crystal is selected as the Shipman & Goodwin Most Promising Emerging Technology Company of the Year at the second annual Innovation Pipeline Awards and
Fairfield Crystal Technology is awarded a National Science Foundation Phase I SBIR grant
Fairfield Crystal Technology is awarded a Department of Energy Phase I SBIR grant – Read Article >
Fairfield Crystal Technology is awarded a Department of Energy Phase II SBIR grant – Read Article >
Fairfield Crystal Technology is awarded a Department of Energy Phase I SBIR grant
